Mechanisms of Mo or Mo-Silicide/n^+ -Si Ohmic Contact Degradation Induced by High-Temperature Annealing

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概要

• 論文の詳細を見る

• The degradation modes and mechanisms for Mo or Mo-silicide/n^÷-Si ohmic contacts induced by high-temperature annealing have been clarified and are classified as follows. 1) High resistance or insulating characteristics are due to oxygen contamination originating from contamination during electrode film deposition, adsorption in an electrode film from the atmosphere and knocked-on oxygen in silicon due to high-dose ion implantation through oxide for the formation of the doped region. 2) Current-flow induced open circuits at partial film cracks along the contact periphery. The film cracks result from volume shrinkage due to silicidation when the oxygen contarnination is less severe. 3) Schottky barrier-like properties induced by dopant outdiffusion through silicide.

• 社団法人応用物理学会の論文
• 1984-08-20

著者

• HIGUCHI Koichi

  Department of Applied Chemistry, Faculty of Engineering, Gunma University

• Higuchi K

  Department Of Applied Chemistry Faculty Of Engineering Gunma University

• OKABAYASHI Hidekazu

  Microelectronics Research Laboratories, NEC Corporation

• Higuchi Kohei

  Microelectronics Research Labs

• KANAMORI Masaru

  Fundamental Research Laboratories, Nippon Electric Co., Ltd.

• Kanamori M

  First Research Dept. Research & Development Div. Nok Corporation

• Kanamori Masaru

  Fundamental Research Laboratories Nec Corporation

• Okabayashi H

  Nec Corp. Ibaraki Jpn

• Okabayashi Hidekazu

  Microelectronics Research Laboratories Nec Corporation

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