Radiation Damage in MOS Devices Underlying an Electron Beam Annealed SOI Structure : A-6: SILICON CRYSTALS

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-28

著者

• Saitoh Shuichi

  Microelectronics Research Labs. Nippon Electric Co. Ltd.

• OKABAYASHI Hidekazu

  Microelectronics Research Laboratories, NEC Corporation

• Higuchi Kohei

  Microelectronics Research Labs

• Okabayashi Hidekazu

  Microelectronics Research Labs. Nippon Electric Co. Ltd.

• Okabayashi Hidekazu

  Microelectronics Research Laboratories Nec Corporation

関連論文

• Planarized Via-Hole Filling with Molybdenum by Bias Sputtering : Techniques, Instrumentations and Measurement
• Radiation Damage in MOS Devices Underlying an Electron Beam Annealed SOI Structure : A-6: SILICON CRYSTALS
• A Highly Stable Al-Si Contact to Mo-Silicided Shallow Junctions
• Mechanisms of Mo or Mo-Silicide/n^+ -Si Ohmic Contact Degradation Induced by High-Temperature Annealing
• Degradation Mechanisms on Mo or Mo-silicide/n^+ -Si Ohmic Contacts on High Temperature Annealing : LATE NEWS
• A Self-Aligned Mo-Silicide Formation

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