Selective Epitaxial Growth of Si and Si_<1-x>Ge_x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Tatsumi T
Nec Corp. Ibaraki Jpn
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TATSUMI Toru
Microelectronics Research Laboratories, NEC Corporation
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Hiroi M
Nec Corp. Ibaraki
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Hiroi Masayuki
Microelectronics Research Laboratories Nec Corporation
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Sakai Junro
Anelva Corporation
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Sakai Junro
Anelva Cotp.
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AKETAGAWA Ken-ichi
ANELVA Cotp.
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NIINO Taeko
Microelectronics Laboratories, NEC Corp.
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Niino T
Microelectronics Laboratories Nec Corp.
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Tatsumi Toru
Microelectronics Laboratories Nec Corporation
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HIROI Masayuki
Microelectronics Laboratories, NEC Corp.
関連論文
- Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics
- Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma-Enhanced Chemical Vapor Deposition
- Characteristics of 0.25 μm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O_3 Capacitor on a Metal/Via-Stacked Plug
- 0.25μm FeRAM with CMVP (Capacitor-on-Metal/Via-Stacked-Plug) Memory Cell
- Selective Epitaxial Growth of Si and Si_Ge_x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface
- Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress
- Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices
- Molecular Beam Flux Monitor Using Cold Cathode Discharge Induced Emission Spectroscopy
- Nitrogen Doped Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition
- Hot-Carrier Reliability of 0.1μm Delta-Doped MOSFETs
- High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures
- Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition
- Photoluminescence of Si_Ge_x/Si Quantum Well Structures
- 7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
- Synthesis of PbTiO_3 Thin Films by Surface-Reaction-Enhanced Metal Organic Chemical Vapor Deposition
- SiGe Passivation for Si MBE Regrowth