Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-04-01
著者
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IKARASHI Nobuyuki
Microelectronics Research Laboratories, NEC Corporation
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TATSUMI Toru
Microelectronics Research Laboratories, NEC Corporation
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Tatsumi Toru
Microelectronics Research Laboratories Nec Corp.
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Tatsumi Toru
Microelectronics Laboratories Nec Corporation
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Ikarashi Nobuyuki
Microelectronics Laboratories Nec Corporation
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TATSUMI Toru
Microelectronics Research Laboratories, NEC Corp.
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- Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface
- Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress
- Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices
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- Hot-Carrier Reliability of 0.1μm Delta-Doped MOSFETs
- High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures
- Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition
- Photoluminescence of Si_Ge_x/Si Quantum Well Structures
- 7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
- Synthesis of PbTiO_3 Thin Films by Surface-Reaction-Enhanced Metal Organic Chemical Vapor Deposition
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