Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• ENDO Kazuhiko

  Microelectronics Research Laboratories, NEC Corporation

• TATSUMI Toru

  Microelectronics Research Laboratories, NEC Corporation

• Tatsumi Toru

  Microelectronics Research Laboratories Nec Corporation

• Tatsumi Toru

  Microelectronics Laboratories Nec Corporation

• Endo Kazuhiko

  Microelectronics Research Laboratories Nec Corporation

関連論文

• Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma-Enhanced Chemical Vapor Deposition
• Selective Epitaxial Growth of Si and Si_Ge_x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface
• Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress
• Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices
• Nitrogen Doped Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition
• Hot-Carrier Reliability of 0.1μm Delta-Doped MOSFETs
• High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures
• Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition
• Photoluminescence of Si_Ge_x/Si Quantum Well Structures
• 7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
• Synthesis of PbTiO_3 Thin Films by Surface-Reaction-Enhanced Metal Organic Chemical Vapor Deposition
• SiGe Passivation for Si MBE Regrowth

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