SiGe Passivation for Si MBE Regrowth
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概要
- 論文の詳細を見る
One of the problems in Si molecular beam epitaxy regrowth for device application is that the cleaning conducted prior to regrowth results in unintentional etching of the Si layer grown in the preceding process. In this study, a SiGe epitaxial layer was successfully applied as a protective coating before RCA cleaning, and a one-order-lower defect density was obtained using the SiGe protective layer without any etching of the Si underlayer. The SiGe layer was completely removed by RCA solution and no Ge was detected in the regrowth layer by Auger electron spectroscopy.
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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NIINO Taeko
Microelectronics Laboratories, NEC Corp.
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Tatsumi Toru
Microelectronics Laboratories Nec Corporation
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