Nitrogen Doped Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Tatsumi Toru
Microelectronics Laboratories Nec Corporation
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Endo Kazuhiko
Microelectronics Research Laboratories Nec Corporation
関連論文
- Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma-Enhanced Chemical Vapor Deposition
- Selective Epitaxial Growth of Si and Si_Ge_x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface
- Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress
- Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices
- Nitrogen Doped Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition
- Hot-Carrier Reliability of 0.1μm Delta-Doped MOSFETs
- High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures
- Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition
- Photoluminescence of Si_Ge_x/Si Quantum Well Structures
- 7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
- Synthesis of PbTiO_3 Thin Films by Surface-Reaction-Enhanced Metal Organic Chemical Vapor Deposition
- SiGe Passivation for Si MBE Regrowth