Tatsumi Toru | Microelectronics Laboratories Nec Corporation

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概要

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著作論文

Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma-Enhanced Chemical Vapor Deposition
Selective Epitaxial Growth of Si and Si_Ge_x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface
Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress
Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices
Nitrogen Doped Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition
Hot-Carrier Reliability of 0.1μm Delta-Doped MOSFETs
High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures
Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition
Photoluminescence of Si_Ge_x/Si Quantum Well Structures
7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
Synthesis of PbTiO_3 Thin Films by Surface-Reaction-Enhanced Metal Organic Chemical Vapor Deposition
SiGe Passivation for Si MBE Regrowth

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