Molecular Beam Flux Monitor Using Cold Cathode Discharge Induced Emission Spectroscopy

スポンサーリンク

概要

• 論文の詳細を見る

• Cold Cathode discharge induced Emission spectroscopy(CCES) was developed in order to apply a multiple molecular beam flux monitor for molecular beam epitaxy. The response characteristics of the emission intensity were in proportion to the molecular beam flux intensity under the MBE growth condition. The arsenic atomic emission intensity was satisfactorily, corresponding to the As_4 molecular beam pressure. The detectable wavelengths of Al, Ga and As were found to be λ(Al)=309 nm, λ(Ga)=294, 417nm and λ(As)=194nm, which did not interfere with each other. When the growth rate of Al was at 0.1 nm/s, and the CCES had an accuracy of 0.1±0.0023 nm/s. The CCES directly controlled the Ga beam flux. The Ga beam pressure directly reflected the response time of the CCES control.

• 社団法人応用物理学会の論文
• 1988-02-20

著者

• Ishida Tetsuo

  Anelva Corporation

• Chen Guorong

  Modern Physics Institute Fudan University

• Sakai Junro

  Anelva Corporation

• HIRAMA Kimiaki

  ANELVA Corporation

• MURAKAMI Shun-ichi

  ANELVA Corporation

関連論文

• Selective Epitaxial Growth of Si and Si_Ge_x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Molecular Beam Flux Monitor Using Cold Cathode Discharge Induced Emission Spectroscopy

スポンサーリンク