AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)

概要

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AlGaAs / GaAs HBT ICs for high bit-rate optical transmission systems, such as preamplifier, D-F / F, differential amplifier, and laser driver, have been newly developed using the hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. In this process, the emitter mesa is ECR-RIBE dry etched using a thick emitter-metal system of WSi and Ti-Pt-Au as etching mask, and a hetero guard-ring composed of a depleted AlGaAs layer is fabricated on p^+ GaAs extrinsic base regions. This process results in highly uniform HBT characteristics. The preamplifier IC exhibits a DC to 18.5-GHz transimpedance bandwidth with a transimpedance gain of 49 dBΩ. The rise time and fall time for the D-F / F IC are 30 and 23 ps, respectively. The laser driver IC has a 40-mA_<p-p> output current swing. The differential amplifier exhibits a DC to 12.1-GHz bandwidth with a 14.2-dB power gain.
社団法人電子情報通信学会の論文
1993-06-25