A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
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概要
- 論文の詳細を見る
- 2011-07-01
著者
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ISHIKAWA Ryo
University of Electro-Communications
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HONJO Kazuhiko
University of Electro-Communications
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Ishikawa Ryo
Univ. Of Electro‐communications Chofu‐shi Jpn
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Honjo Kazuhiko
University Of Electro Communications
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Ishikawa Ryo
The University Of Electro-communications
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YOSHIDA Tsuyoshi
The University of Electro-Communications
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Takayama Yoichiro
University Of Electro-communications
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ANDO Akihiro
University of Electro-Communications
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YOSHIDA Tsuyoshi
University of Electro-Communications
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