3-V Operation Power HBTs for Digital Cellular Phones (Special Issue on Microwave Devices for Mobile Communications)

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概要

• 論文の詳細を見る

• A1GaAs/GaAs power HBTs for digital cellular phones have been developed. A three-dimensional thermal analysis taking the local-temperature dependence of the collector current into account was applied to the thermal design of the HBTs. The HBTs were fabricated using the hetero-guardring fully self-aligned transistor technique. The HBT with 2 × 20μm^2 × 60 emitters produced a 31.7 dBm CW-output power and 46 % power-added efficiency with an adjacent channel leakage power of -49 dBc at the ±50 kHz offset bands for a 948 MHz π/4-shifted QPSK modulated signal at a low collector-emitter voltage of 3 V. Through comparison with the conventional GaAs power FETs, it has been shown that AlGaAs/GaAs power HBTs have a great advantage in reducing the chip size.

• 1996-05-25

著者

• HONJO Kazuhiko

  University of Electro-Communications

• Takahashi Hisakazu

  Technology R&d Headquarters Materials And Devices Development Center Bu Sanyo Electric Co.

• Goto N

  Radial Antenna Laboratory

• Kim Chang-woo

  Department Of Radio Science And Engineering Kyung-hee University

• Honjo K

  University Of Electro-communications

• Honjo Kazuhiko

  Microelectronics Research Laboratories Nec Corporation

• HAYAMA Nobuyuki

  Microelectronics Research Laboratories, NEC Corporation

• TAKAHASHI Hideki

  Microelectronics Research Laboratories, NEC Corporation

• MIYOSHI Yosuke

  Microelectronics Research Laboratories, NEC Corporation

• GOTO Norio

  Microelectronics Research Laboratories, NEC Corporation

• Miyoshi Yosuke

  Microelectronics Research Laboratories Nec Corporation

• Hayama N

  Microelectronics Research Laboratories Nec Corporation

• Hayama Nobuyuki

  Microelectronics Research Laboratories Nec Corporation

• Takahashi H

  Nec Electronics Corporation

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