Microwave Synthesis of Iridium(III) Complexes: Synthesis of Highly Efficient Orange Emitters in Organic Light-Emitting Devices
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概要
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Microwave synthesis of tris-ortho-metalated Ir(III) complexes was performed and resulted complexes were applied to the electrophosphorescent devices. For synthesis of Ir(ppy)3, the product was obtained by 30 min. microwave irradiation. That is microwave irradiation reduced the reaction time to 1/20 of that under conventional heating. Furthermore, we succeeded the rapid microwave synthesis of tris(2-phenyl-1-quinoline)iridium(III), Ir(phq)3, which is hard to synthesis by conventional method. An electrophosphorescent device with Ir(phq)3 as a dopant in emitting layer was developed. It demonstrated a high-efficient orange emission with maximum luminous efficiency of 33.4 cd/A and a power efficiency of 11.7 lm/W at 800 cd/m2. The color of emission corresponds to CIE coordinates $x=0.56$, $y=0.43$. The device showed a projected operational lifetime, namely $T_{1/2}$, of 6500 h at an initial brightness of 1500 cd/m2 under constant dc drive.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-05-15
著者
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Kanno Hiroshi
Technology R&d Headquarters Materials And Devices Development Center Bu Sanyo Electric Co.
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MATSUSUE Noriyuki
Technology R&D Headquarters Materials and Devices Development Center BU, SANYO Electric Co.
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MATSUMURA Takeko
Minerva Light Laboratory
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Takahashi Hisakazu
Technology R&d Headquarters Materials And Devices Development Center Bu Sanyo Electric Co.
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Hamada Yuji
Technology R&d Headquarters Materials And Devices Development Center Bu Sanyo Electric Co.
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Saito Kaori
Technology R&d Headquarters Materials And Devices Development Center Bu Sanyo Electric Co.
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Takahashi Hisakazu
Technology R&D Headquarters Materials and Devices Development Center BU, SANYO Electric Co., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Hamada Yuji
Technology R&D Headquarters Materials and Devices Development Center BU, SANYO Electric Co., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Saito Kaori
Technology R&D Headquarters Materials and Devices Development Center BU, SANYO Electric Co., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Kanno Hiroshi
Technology R&D Headquarters Materials and Devices Development Center BU, SANYO Electric Co., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Matsusue Noriyuki
Technology R&D Headquarters Materials and Devices Development Center BU, SANYO Electric Co., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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