High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28V Operated W-CDMA Base Station(Compound Semiconductor and Power Devices,<Special Section>Fundamentals and Applications of Advanced Semiconductor Devices)
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概要
- 論文の詳細を見る
This report presents Dual Field-modulating-Plates (Dual-FP) technology for a 28V operated high power GaAs heterojunction FET (HJFET) amplifier. A developed HJFET has two FP electrodes; the 1st-FP is connected to the gate and the 2nd-FP to the ground. The 2nd-FP suppresses the drain current dispersion effectively cooperating with the 1st-FP, and it can also reduce the gate-drain parasitic capacitance. The developed push-pull amplifier, with four Dual-FPFET chips, demonstrated 55.1dBm (320W) output power with a 14.0dB linear gain and a drain efficiency of 62% at 2.14GHz. Under two-carrier W-CDMA signals, it showed a high drain efficiency of 30% and low third-order Inter-modulation distortion of -37dBc at output power of 47.5dBm.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
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Hasegawa Kouichi
Nec Electronics Corporation
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Takahashi Hisakazu
Technology R&d Headquarters Materials And Devices Development Center Bu Sanyo Electric Co.
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Iwata Naotaka
Nec Electronics Corp. Otsu‐shi Jpn
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Iwata Naotaka
Nec Electronics Corp.
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Asano K
Nec Electronics Corporation
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ISHIKURA Kouji
NEC Electronics Corporation
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TAKENAKA Isao
NEC Electronics Corporation
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TAKAHASHI Hidemasa
NEC Electronics Corporation
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ASANO Kazunori
NEC Electronics Corporation
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Ishikura Kohji
Nec Electronics Corporation
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Takahashi Hidemasa
Nec Electronics Corp.
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Takahashi H
Nec Electronics Corporation
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