TAKENAKA Isao | NEC Electronics Corporation
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概要
関連著者
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Takahashi Hisakazu
Technology R&d Headquarters Materials And Devices Development Center Bu Sanyo Electric Co.
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Asano K
Nec Electronics Corporation
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TAKENAKA Isao
NEC Electronics Corporation
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Ishikura Kohji
Nec Electronics Corporation
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Takahashi H
Nec Electronics Corporation
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Hasegawa Kouichi
Nec Electronics Corporation
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Iwata Naotaka
Nec Electronics Corp. Otsu‐shi Jpn
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Iwata Naotaka
Nec Electronics Corp.
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ISHIKURA Kouji
NEC Electronics Corporation
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TAKAHASHI Hidemasa
NEC Electronics Corporation
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ASANO Kazunori
NEC Electronics Corporation
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TAKENAKA Isao
ULSI Device Development Laboratories, NEC Corporation
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TAKAHASHI Hidemasa
ULSI Device Development Laboratories, NEC Corporation
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ASANO Kazunori
ULSI Device Development Laboratories, NEC Corporation
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ISHIKURA Kohji
ULSI Device Development Laboratories, NEC Corporation
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MORIKAWA Junko
ULSI Device Development Laboratories, NEC Corporation
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TSUTSUI Hiroaki
ULSI Device Development Laboratories, NEC Corporation
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KUZUHARA Masaaki
Kansai Electronics Laboratories, NEC Corporation
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Takahashi Hidemasa
Nec Electronics Corp.
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Morikawa Junko
Ulsi Device Development Laboratories Nec Corporation
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Tsutsui Hiroaki
Ulsi Device Development Laboratories Nec Corporation
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Kuzuhara Masaaki
Kansai Electronics Laboratories Nec Corporation
著作論文
- High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28V Operated W-CDMA Base Station(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)