1.8V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p^+-GaAs Gate Hetero-Junction FET

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概要

• 論文の詳細を見る

• We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p+-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5mm×1.5mm×0.4mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20dBm is achieved with an associated gain of 22dB. Also, sufficiently low leakage current of 0.25μA at 27°C is exhibited, which is comparable to conventional HBT power amplifiers.

• （社）電子情報通信学会の論文
• 2008-07-01

著者

• Iwata Naotaka

  Nec Electronics Corp. Otsu‐shi Jpn

• Iwata Naotaka

  Nec Electronics Corp.

• TAKAHASHI Hidemasa

  NEC Electronics Corporation

• Takahashi Hidemasa

  Nec Electronics Corp.

• HARIMA Fumio

  NEC Electronics Corp.

• BITO Yasunori

  NEC Electronics Corp.

関連論文

• High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28V Operated W-CDMA Base Station(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• 1.8V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p^+-GaAs Gate Hetero-Junction FET

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