A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters
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概要
- 論文の詳細を見る
A precise method for determining AlGaAs / GaAs HBT large-signal circuit parameters is presented. In this method, the parameters are extracted from noise parameters and small-signal S-parameters measured under various bias conditions. The measured noise parameters are fitted to the calculated noise parameters derived from an approximation of Hawkins' equations applied to the macroscopic equivalent circuit. The small-signal S-parameters help to determine the large-signal circuit parameters. The derived large-signal parameters were used to design an HBT oscillator. The simulated reults using these parameters were in good agreement with the fabricated device performance.
- 社団法人電子情報通信学会の論文
- 1993-01-25
著者
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Honjo Kazuhiko
Microelectronics Research Laboratories Nec Corporation
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HAYAMA Nobuyuki
Microelectronics Research Laboratories, NEC Corporation
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Shimizu Jun-ichi
Opto-Electronics Research Laboratories, NEC Corporation
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Hayama Nobuyuki
Microelectronics Research Laboratories Nec Corporation
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Shimizu Jun-ichi
Opto-electronics Research Laboratories Nec Corporation
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- A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters
- Recent Advance of Millimeter Wave Technology in Japan (Special Issue on Millimeter-wave Short-range Application Systems Technology)