InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems
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概要
- 論文の詳細を見る
A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1GHz to 10.6GHz with a 14.1dB peak power gain. The amplifier exhibited a low power consumption of 15.9mW and a low noise figure of less than 3.7dB in the full-band of the UWB.
- （社）電子情報通信学会の論文
- 2008-11-01
著者
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ISHIKAWA Ryo
University of Electro-Communications
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HONJO Kazuhiko
University of Electro-Communications
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Abe Tatsuya
University Of Electro-communications
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Ishikawa Ryo
Univ. Of Electro‐communications Chofu‐shi Jpn
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Honjo Kazuhiko
University Of Electro Communications
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ABE Takuya
University of Electro-Communications
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SHIMADA Masao
NANOTECO Corporation
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Ishikawa Ryo
The University Of Electro-communications
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