Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies(High-Speed HBTs and ICs,<Special Section>Heterostructure Microelectronics with TWHM2005)

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The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tanδ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, C_<bc>, for power added efficiency, PAE, and collector efficiency, η_c, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and η_c, reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 2×10^<16>cm^<-3>. In case circuit losses were de-embedded for the experimental results, PAE and η_c were estimated as 78.7% and 81.2%, respectively. These are very close to obtainable maximum PAE for the use of the InGaP/GaAs HBT.
社団法人電子情報通信学会の論文
2006-07-01