AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
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概要
- 論文の詳細を見る
This report describes AlGaAs/GaAs HBT ICs for 20-Gb/s optical transmission, the preamplifier and optical modulator driver circuits, and those ICs for 10-Gb/s clock extraction circuits, the rectifier and phase shifter circuits. These ICs were fabricated using our developed hetero guard-ring fully self-aligned HBT (HG-FST) fabrication process. The Pt-Ti-Pt-Au multimetal system was also used as a base ohmic metal to reduce base contact resistance, and a high fTna:L: of 105 GHz was obtained. Good results in the HBT IC microwave performances were achieved from the on-wafer measurements. The preamplifiers exhibited the broad bandwidth of 20.9 GHz. The optical modulator driver performed a sufficiently large output-voltage swing of 4-V_<P-P> at a 20-Gb/s data rate. The rectifier and the phase shifter circuits achieved good operations at 10-Gb/s. These results suggest that these HBT ICs can be applied to 20-Gb/s optical transmission and 10-Gb/s clock extraction systems.
- 社団法人電子情報通信学会の論文
- 1999-03-25
著者
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HONJO Kazuhiko
University of Electro-Communications
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Tezuka Hiroshi
C&c Media Research Laboratories Nec Corporation
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Honjo K
University Of Electro-communications
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NAGANO Nobuo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SODA Masaaki
C&C Media Research Laboratories, NEC Corporation
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TEZUKA Hiroshi
C&C Media Research Laboratories, NEC Corporation
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SUZAKI Tetsuyuki
C&C Media Research Laboratories, NEC Corporation
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HONJO Kazuhiko
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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Soda Masaaki
C&c Media Research Laboratories Nec Corporation
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Nagano N
Kirin Brewery Co. Ltd. Gunma Jpn
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Suzaki T
C&c Media Research Laboratories Nec Corporation
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