Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)

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Recessed-gate DMTs (doped-channel hetero-MISFETs) with i-AlGaAs / n-GaAs structure and pseudomorphic i-AlGaAs / n-InGaAs / i-GaAs structure have been developed. Broad plateaus in g_m and f_T provide evidence that the DMTs make the devices suitable for high-speed large-signal operation. GaAs DMTs with 0.35 μm-length have gate turn on voltage of 0.7 V, maximum transconductance of 320 mS / mm and f_T of 41 GHz. Pseudomorphic DMTs have gate turn on voltage of 0.9 V, maximum transconductance of 320 mS / mm, f_T of 42 GHz and have the enhanced advantages of high current drivability and large gate swing. Further more, with the use of the recessed-gate DMTs, a high-speed laser driver IC for multi-Gb / s optical communication systems are demonstrated. This laser driver IC operates at 10 Gb / s with rise and fall times as fast as 40 psec, and it can drive up to 60 mA into a 25 Ω load.
社団法人電子情報通信学会の論文
1993-06-25