Uniform Epitaxial Growth of Modulation-Doped GaAs/Ga_<0.7>Al_<0.3>As on Three-Inch Substrate by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-02-20

著者

• Okamoto Akihiko

  Microelectronics Research Laboratories Nec Corporation

• Okamoto Akihiko

  Microelectronic Laboratories

• Kamejima T

  Resource & Environment Protection Research Laboratories

• TERAO Hiroshi

  NEC Corporation, Fundamental Research Laboratories

• KAMEJIMA Taibun

  Resource & Environment Protection Research Laboratories

• Terao Hiroshi

  Nec Corporation Fundamental Research Laboratories

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• Uniform Epitaxial Growth of Modulation-Doped GaAs/Ga_Al_As on Three-Inch Substrate by Metalorganic Chemical Vapor Deposition
• Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
• New Resonant Tunneling Diode with a Deep Quantum-Well

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