New Resonant Tunneling Diode with a Deep Quantum-Well

概要

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A new resonant tunneling diode has been fabricated by employing an In_<0.1>Ga_<0.9>As strained layer quantum-well, where its conduction band edge is lower than that of emitter and collector regions. The obtained peak-current voltage is reduced to about 150 mV, which is less than half of that for the diode with a GaAs quantum-well. The high peak-to-valley ratio of 13 is observed at 77 K. This suggests that the peak-current voltage for this structure could be controlled by changing indium composition of the In_yGa_<1-y>As quantum-well, while retaining a large peak-to-valley ratio.
社団法人応用物理学会の論文
1986-09-20