スポンサーリンク
Microelectronics Research Laboratories, NEC Corporation | 論文
- Sub-Micron Pattern Control Technology for Variable-Shaped EB Lithography : A-5: PROCESS TECHNOLOGY
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- Effects of Discharge Frequency on the Ion-Current Density and Etching Characteristics in High-Density Cl_2 Plasmas
- BIST Circuit Macro Using Microprogram ROM for LSI Memories
- Capacitance Network Model of the Short Channel Effect for 0.1 μm Fully Depleted SOI MOSFET
- Modeling on the Channel-To-S/D Capacitance and the Short Channel Effect for 0.1μm Fully Depleted SOI-MOSFET
- Improved Drop Ejection Characteristics through Use of Micro-Valves in Ink Jet Head
- Minute Strain Fields due to Vacancy Type Defects in a Rapidly Cooled Czochralski-Grown Silicon Crystal
- Effects of Electrons Ejected from the Substrate on PGMA Negative Resist Cross-Linking in X-Ray Lithography
- New Resonant Tunneling Diode with a Deep Quantum-Well
- Polyvinyl Alcohol Film Coating Effect on Novolac-Based Positive Electron Resist Sensitivity in X-Ray Lithography in an Atmospheric Environment
- An 8-bit 200 Ms/s 500 mW BiCMOS ADC (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures
- Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma Enhanced Chemical Vapor Deposition
- Photoluminescence of Si_Ge_x/Si Quantum Well Structures
- Energy-Dispersive Grazing Incidence Diffraction with Synchrotron Radiation White X-Rays of Very Thin Polycrystalline Silicon Films
- A Self-Aligned Mo-Silicide Formation
- Analysis on the Threshold Voltage Fixing and the Floating-Body-Effect Suppression for 0.1μm Fully Depleted SOI-MOSFET
- Analysis of The Threshold Voltage Adjustment and Floating Body Effect Suppression for 0.1 μm Fully Depleted SOI-MOSFET