Effects of Discharge Frequency on the Ion-Current Density and Etching Characteristics in High-Density Cl_2 Plasmas

スポンサーリンク

概要

• 論文の詳細を見る

• We investigated the effects of discharge frequency on the characteristics of polycrystalline silicon (poly-Si) etching rates and on the etching selectivity on the gate oxide (SiO_2). An ultrahigh-frequency (UHF) plasma excited at 500MHz was found to possess a wider process window for highly selective polycrystalline silicon etching than a radio frequency (RF) plasma excited at 13.56MHz. This result has a strong correlation to the pressure dependence of the ion current density in both plasmas. In the UHF plasma, high ion-current density can be maintained in a wider pressure range, form 3 to 20mTorr, whereas in the RF plasma the current density is drastically decreased with an increase in pressure. Thus, because the discharge frequency in the UHF plasma is higher than the electron collision frequency, the ionization in the UHF plasma does not depend significantly on the discharge pressure from 3 to 20mTorr.

• 社団法人応用物理学会の論文
• 1997-10-01

著者

• SAMUKAWA Seiji

  Microelectronics Research Laboratories, NEC Corporation

• TSUKADA Tsutomu

  Anelva Corporation

• Tsukada Tsutomu

  Anelva Corp.

• Samukawa Seiji

  Microelectronics Research Laboratories Nec Corporation

関連論文

• Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
• New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes
• Variation of Radial Plasma Density Profile with the Excitation Frequency in a Magnetron-Type Plasma
• Modified Magnetron Type Plasma Source for Etching Applications
• Measurements of Power Absorption in a Modified Magnetron-type Discharge
• Time Variation of Plasma Properties in a Pulse-Time-Modulated Electron Cyclotron Resonance Discharge of Chlorine Gas
• Dependence of Electron Energy Distributions on Discharge Pressure in Ultrahigh-Frequency and Inductive-Coupled Cl_2 Plasmas
• Etching Characteristics by M=0 Helicon Wave Plasma ( Plasma Processing)
• Electrode Temperature Effect in Narrow-Gap Reactive Ion Etching
• Effects of Discharge Frequency on the Ion-Current Density and Etching Characteristics in High-Density Cl_2 Plasmas
• Polymerization for Highly Selective SiO_2 Plasma Etching
• Characteristics of Etch Rate Uniformity in Aluminum Reactive Ion Etching
• Measurements of Power Absorption in a Modified Magnetron-type Discharge

もっと見る 閉じる

スポンサーリンク