Characteristics of Etch Rate Uniformity in Aluminum Reactive Ion Etching

スポンサーリンク

概要

• 論文の詳細を見る

• The characteristics of aluminum etch rate uniformity across a wafer were studied using a parallel-plate reactive ion etching apparatus. The etch rate uniformity was found to be affected by the process gases, the cover materials of the cathode, the rotation of the cathode and the gas inlet positions. Results indicated that it was difficult to improve the uniformity under the condition of the etching being distributed uniformly over the cathode. In order to obtain good uniformity, the etching must be confined on the wafer surface. Procedures to improve the etch rate uniformity are discussed.

• 社団法人応用物理学会の論文
• 1991-11-15

著者

• Tsukada Tsutomu

  Anelva Corp.

関連論文

• New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes
• Variation of Radial Plasma Density Profile with the Excitation Frequency in a Magnetron-Type Plasma
• Modified Magnetron Type Plasma Source for Etching Applications
• Dependence of Electron Energy Distributions on Discharge Pressure in Ultrahigh-Frequency and Inductive-Coupled Cl_2 Plasmas
• Etching Characteristics by M=0 Helicon Wave Plasma ( Plasma Processing)
• Electrode Temperature Effect in Narrow-Gap Reactive Ion Etching
• Effects of Discharge Frequency on the Ion-Current Density and Etching Characteristics in High-Density Cl_2 Plasmas
• Characteristics of Etch Rate Uniformity in Aluminum Reactive Ion Etching
• Measurements of Power Absorption in a Modified Magnetron-type Discharge

スポンサーリンク