Dependence of Electron Energy Distributions on Discharge Pressure in Ultrahigh-Frequency and Inductive-Coupled Cl_2 Plasmas
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-30
著者
-
TSUKADA Tsutomu
Anelva Corporation
-
Samukawa Seiji
Silicon Systems Research Laboratories Nec Corporation
-
Tsukuda T
Sci. Univ. Tokyo Chiba Jpn
-
Tsukada Tsutomu
Anelva Corp.
関連論文
- New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes
- Variation of Radial Plasma Density Profile with the Excitation Frequency in a Magnetron-Type Plasma
- Modified Magnetron Type Plasma Source for Etching Applications
- Measurements of Power Absorption in a Modified Magnetron-type Discharge
- Dependence of Electron Energy Distributions on Discharge Pressure in Ultrahigh-Frequency and Inductive-Coupled Cl_2 Plasmas
- Effects of Discharge Frequency in Plasma Etching and Ultrahigh-Frequency Plasma Source for High-Performance Etching for Ultralarge-Scale Integrated Circuits
- Etching Characteristics by M=0 Helicon Wave Plasma ( Plasma Processing)
- Electrode Temperature Effect in Narrow-Gap Reactive Ion Etching
- Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma
- Effects of Discharge Frequency on the Ion-Current Density and Etching Characteristics in High-Density Cl_2 Plasmas
- Effects of Degree of Dissociation on Aluminum Etching in High-Density Cl_2 Plasmas
- Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma
- Characteristics of Etch Rate Uniformity in Aluminum Reactive Ion Etching
- Measurements of Power Absorption in a Modified Magnetron-type Discharge