Effects of Discharge Frequency in Plasma Etching and Ultrahigh-Frequency Plasma Source for High-Performance Etching for Ultralarge-Scale Integrated Circuits
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-15
著者
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Malyshev Mikhail
Bell Laboratories Lucent Technologies
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Samukawa Seiji
Silicon Systems Research Laboratories Nec Corporation
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DONNELLY Vincent
Bell Laboratories, Lucent Technologies
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Donnelly Vincent
Bell Laboratories Lucent Technologies
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SAMUKAWA Seiji
Silicon Systems Research Laboratories, NEC Corporation
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MALYSHEV Mikhail
Bell Laboratories, Lucent Technologies
関連論文
- Dependence of Electron Energy Distributions on Discharge Pressure in Ultrahigh-Frequency and Inductive-Coupled Cl_2 Plasmas
- Effects of Discharge Frequency in Plasma Etching and Ultrahigh-Frequency Plasma Source for High-Performance Etching for Ultralarge-Scale Integrated Circuits
- Trace Rare Gases Optical Emission Spectroscopy for Determination of Electron Temperatures and Species Concentrations in Chlorine-Containing Plasmas
- Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma
- Effects of Degree of Dissociation on Aluminum Etching in High-Density Cl_2 Plasmas
- Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma
- Trace Rare Gases Optical Emission Spectroscopy for Determination of Electron Temperatures and Species Concentrations in Chlorine-Containing Plasmas