Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Noguchi Ko

  Ulsi Device Development Laboratory Nec Corporation

• Noguchi Ko

  Ulsi Device Development Laboratories Nec Corporation

• Ohtake Hiroto

  Silicon Systems Research Laboratories Nec Corporation

• Samukawa Seiji

  Silicon Systems Research Laboratories Nec Corporation

関連論文

• A New Post-Metal Threshold Voltage Adjustment Scheme by Hydrogen Ion Implantation
• Dependence of Electron Energy Distributions on Discharge Pressure in Ultrahigh-Frequency and Inductive-Coupled Cl_2 Plasmas
• Effects of Discharge Frequency in Plasma Etching and Ultrahigh-Frequency Plasma Source for High-Performance Etching for Ultralarge-Scale Integrated Circuits
• Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma
• Influence of Gate Oxide Quality on Plasma Process-Induced Charging Damage in Ultra Thin Gate Oxide
• Influence of Gate Oxide Quality on Plasma Process-Induced Damage in Ultra Thin Gate Oxide
• Effects of Degree of Dissociation on Aluminum Etching in High-Density Cl_2 Plasmas
• Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma

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