Effects of Degree of Dissociation on Aluminum Etching in High-Density Cl_2 Plasmas

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概要

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• At the same input power (1000 W), inductive coupled plasma (ICP) and ultrahigh-frequency (UHF) plasma sources produced electron densities of 1×10^<11> cm^<-3> at 3.5 mTorr, yet the UHF plasma was much less dissociated (30%) than the ICP plasma (70%). This can be attributed to differences in the electron energy distribution functions in the UHF and ICP plasmas, especially at low pressure. Under these conditions, Al etching profiles were investigated to understand the influences of the degree of dissociation on the etching reactions. UHF plasmas could completely accomplish anisotropic etching with just Cl_2 as the feed gas, whereas the ICP produced isotropic etching profiles under the same conditions. This implies that the degree of dissociation strongly influences etching of the Al sidewall, as well as the anisotropic etching rate in a high density Cl_2 plasma.

• 社団法人応用物理学会の論文
• 1998-09-15

著者

• Samukawa Seiji

  Silicon Systems Research Laboratories Nec Corporation

• Donnelly Vincent.

  Bell Laboratories Lucent Technologies

• SAMUKAWA Seiji

  Silicon Systems Research Laboratories, NEC Corporation

• Donnelly Vincent.M.

  Bell Laboratories, Lucent Technologies

関連論文

• Dependence of Electron Energy Distributions on Discharge Pressure in Ultrahigh-Frequency and Inductive-Coupled Cl_2 Plasmas
• Effects of Discharge Frequency in Plasma Etching and Ultrahigh-Frequency Plasma Source for High-Performance Etching for Ultralarge-Scale Integrated Circuits
• Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma
• Effects of Degree of Dissociation on Aluminum Etching in High-Density Cl_2 Plasmas
• Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma

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