Influence of Gate Oxide Quality on Plasma Process-Induced Damage in Ultra Thin Gate Oxide

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Noguchi Ko

  Ulsi Device Development Laboratory Nec Corporation

• Noguchi Ko

  Ulsi Device Development Laboratories Nec Corporation

• Okushima Mototsugu

  Ulsi Device Development Laboratory Nec Corporation

関連論文

• A New Post-Metal Threshold Voltage Adjustment Scheme by Hydrogen Ion Implantation
• Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma
• Influence of Gate Oxide Quality on Plasma Process-Induced Charging Damage in Ultra Thin Gate Oxide
• Influence of Gate Oxide Quality on Plasma Process-Induced Damage in Ultra Thin Gate Oxide

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