Electrode Temperature Effect in Narrow-Gap Reactive Ion Etching
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概要
- 論文の詳細を見る
The SiO_2 etch characteristics were investigated using a narrow-gap reactive ion etching (RIE) apparatus. The etch rate was decreased and the selectivity to Si was increased when the upper electrode temperature was increased. However, the etch characteristics were independent of the absolute temperatures of the electrodes. This phenomenon can be explained in terms of the difference in the polymer deposition rate on walls that have different temperatures.
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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TSUKADA Tsutomu
Anelva Corporation
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Mashimo K
Anelva Corp. Tokyo Jpn
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Tsukada T
Tdk Corp. Chiba Jpn
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Tsukada Tsutomu
Anelva Corp.
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MASHIRO Supika
ANELVA Corporation
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MASHIMO Kimiko
ANELVA Corporation
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