Polymerization for Highly Selective SiO_2 Plasma Etching

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概要

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• In this letter, we report the relationships between polymerization on Si substrates and the generation ratio for reactive species in fluorocarbon plasma, and reveal essential points for SiO_2 etching selectivity to underlying Si. The SiO_2 etching selectivity to underlying Si is determined by both the fluoropolymer deposition rate and the sputtering rate on underlying Si. The sputtering rate strongly depends on the F atom concentration in the polymer. Conversely, the deposition rate depends on the CF_2 radical density in the plasma. Therefore, control of the generation ratio of CF_2 radicals to F atoms is needed to realize highly selective SiO_2 etching.

• 社団法人応用物理学会の論文
• 1993-09-01

著者

• FURUOYA Shuichi

  ULSI Device Development Laboratories, NEC Corporation

• Samukawa Seiji

  Microelectronics Research Laboratories Nec Corporation

• Furuoya Shuichi

  Ulsi Device Development Laboratories Nec Corporation

関連論文

• Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
• Time Variation of Plasma Properties in a Pulse-Time-Modulated Electron Cyclotron Resonance Discharge of Chlorine Gas
• Effects of Discharge Frequency on the Ion-Current Density and Etching Characteristics in High-Density Cl_2 Plasmas
• Analysis of Fluorocarbon Film Deposited by Highly Selective Oxide Etching
• Polymerization for Highly Selective SiO_2 Plasma Etching

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