Effects of Electrons Ejected from the Substrate on PGMA Negative Resist Cross-Linking in X-Ray Lithography

スポンサーリンク

概要

• 論文の詳細を見る

• Effects of electrons ejected from the substrate on poly (glycidyl methacrylate) (PGMA) cross-linking have been experimentally studied by comparing sensitivity characteristics obtained using Pd, Mo, Si and Al X-ray sources. In the Al, Si or SiO_2 substrate, remaining PGMA film thicknesses, measured at the gel-point X-ray dose obtained with the AZ-1450 J substrate, have been compared for the above 4 X-ray sources. It was found that the remaining film thicknesses were in the 100-500 A range. It was also found that fairly close correlation exists between the remaining film thickness and the absorption coefficient for the substrate.

• 社団法人応用物理学会の論文
• 1983-12-20

著者

• Matsui Junji

  Microelectronics Research Laboratories Nec Corporation

• OKADA Koichi

  Microelectronics Research Laboratories, NEC Corporation

• Okada Koichi

  Microelectronics Research Laboratories Nec Corporation

関連論文

• Effects of Electrons Ejected from the Substrate on PGMA Negative Resist Cross-Linking in X-Ray Lithography
• Polyvinyl Alcohol Film Coating Effect on Novolac-Based Positive Electron Resist Sensitivity in X-Ray Lithography in an Atmospheric Environment
• In-Situ Thermographical Temperature Measurement of Be Windows Irradiated by Synchrotron Radiation : Techniques, Instrumentations and Measurement
• Study of Exposure Atmosphere Effect on PGMA Negative Resist Cross-Linking in X-Ray Lithography Using 1-3 keV Soft X-Ray Sources

スポンサーリンク