Study of Exposure Atmosphere Effect on PGMA Negative Resist Cross-Linking in X-Ray Lithography Using 1-3 keV Soft X-Ray Sources

概要

論文の詳細を見る
Experimental comparisons between exposure atmosphere effects on poly (glycidyl methacrylate) (PGMA) cross-link-ing in Al, Si, Mo and Pd soft (1 to 3 keV) X-ray sources have been made in relation to the interaction with electrons ejected from the gold film on the X-ray mask. Under air and He gas atmosphere conditions, the exposures were performed using an X-ray mask with a thin gold film. In Al and Si X-ray sources, PGMA cross-linking markedly increases with increasing atmosphere air-pressure, whereas it remains constant and low in He gas atmosphere. Concerning Mo and Pd X-ray sources, in contrast, PGMA cross-linking is raised up to an extremely high level in both air and He gas atmospheres. The effect of the mask-to-wafer gap on PGMA cross-linking have also been examined to interpret the above phenomena. An explanation is offered which considers the ionizaion of He gas as well as air caused by electrons ejected from the gold film.
社団法人応用物理学会の論文
1985-06-20