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LSI Research and Development Laboratory, Mitsubishi Electric Corporation | 論文
- New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
- Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
- Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
- Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
- Evaluation and Control of Grain Boundaries in Laser-Recrystallized Polysilicon Islands for Device Fabrication : A-6: SILICON CRYSTALS
- New Dynamic RAM Cell Combined with Hi-C Structure : A-2: LSI-1
- Effect of the Structure of a Photoactive Compound on the Dissolution Inhibition Effect : Resist Material and Process
- Optical Absorption in Silicon Oxide Film Near the SiO_2/Si Interface
- Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
- An Automatic Temperature Compensation of Internal Sense Ground for Subquarter Micron DRAM's(Special Issue on the 1994 VLSI Circuits Symposium)
- Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
- Characterization of Silicon Implanted with Focused Ion Beam by Raman Microprobe
- Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone
- Reactive Ion Beam Etching Using a Selective Gallium Doping Method
- Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
- Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
- Radiation Annealing of Si- and S-Implanted GaAs
- Zinc Diffusion into InSb