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LSI Research and Development Laboratory, Mitsubishi Electric Corporation | 論文
- Preparation of High Quality n-Hg_Cd_Te Epitaxial Layer and Its Application to Infrared Detector (λ=8-14 μm)
- Low-Temperature Characteristics of Buried-Channel Charge-Coupled Devices
- Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- An AlGaAs/GaAs Concentrator Solar Cell Operating at High Concentration Ratios without Forced Cooling
- Performance of 1 kWp AlGaAs/GaAs Terrestrial Concentrator Solar Cell Amay : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- A New Structure for High Efficiency and Humidity Resistant AlGaAS/GaAs Solar Cells : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : III-3: III-V COMPOUND SOLAR CELLS
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- A Dual-Stripe Phase-Locked Diode Laser
- Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
- Thermally Stable Metallization to InSb
- An All Dry Mask Making Process by Reverse Gas Plasma Etching
- An All Dry Mask Making Process by Gas Plasma
- Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation