Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-12-20
著者
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Yoshida Susumu
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Oda Takao
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Yukimoto Yoshinori
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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MITSUI Kotaro
Lsi Research and Development Laboratory, Mitsubishi Electric Corporation
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YUKIMOTO Yoshinory
Lsi Research and Development Laboratory, Mitsubishi Electric Corporation
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Mitsui Kotaro
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
関連論文
- Broadening of Spectral Response Width by a-Si/aSiGe p-i-n type Solar Cells : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- An AlGaAs/GaAs Concentrator Solar Cell Operating at High Concentration Ratios without Forced Cooling
- Performance of 1 kWp AlGaAs/GaAs Terrestrial Concentrator Solar Cell Amay : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- A New Structure for High Efficiency and Humidity Resistant AlGaAS/GaAs Solar Cells : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : III-3: III-V COMPOUND SOLAR CELLS
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : B-6: SOLAR CELLS AND AMORPHOUS DEVICES