An AlGaAs/GaAs Concentrator Solar Cell Operating at High Concentration Ratios without Forced Cooling
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概要
- 論文の詳細を見る
A 1×1 cm^2 p-AlGaAs/p-GaAs/n-GaAs concentrator solar cell operating at high concentration ratios without forced cooling is described. The cell has a fairly large junction depth (the thickness of the p-GaAs layer) of 3 μm which reduces the sheet resistance of the surface layer and permits the use of a relatively crude contact grid pattern which is easily fabricated. The cell has its highest fill factor of 0.889 at 50-100 suns and its highest efficiency of 22.7% at 50-200 suns, and also maintains a practical efficiency of 17.6% even at 1025 suns without forced cooling.
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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Yoshida Susumu
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Oda Takao
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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YOSHIDA Masahiro
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Yukimoto Yoshinori
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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MITSUI Kotaro
Lsi Research and Development Laboratory, Mitsubishi Electric Corporation
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Mitsui Kotaro
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Yoshida Masahiro
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
関連論文
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- An AlGaAs/GaAs Concentrator Solar Cell Operating at High Concentration Ratios without Forced Cooling
- Performance of 1 kWp AlGaAs/GaAs Terrestrial Concentrator Solar Cell Amay : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
- A New Structure for High Efficiency and Humidity Resistant AlGaAS/GaAs Solar Cells : II-2: COMPOUND SEMICONDUCTOR SOLAR CELLS (II)
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