Radiation Annealing of Si- and S-Implanted GaAs

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概要

• 論文の詳細を見る

• Radiation annealing of Si- and S-implanted GaAs using tungsten lamps was studied. In capless radiation annealing, electrical activations were 70-80%, which were 20-30% higher than that in conventional furnace annealing for a low dose below 2×10^<13> cm^<-2>. Effects of encapsulation on electrical activation were also investigated. It was found that electrical activations of high dose samples were improved by encapsulating the surface with SiO_2 film for Si-implanted samples and with Si_3N_4 film for S-implanted samples.

• 社団法人応用物理学会の論文
• 1983-05-20

著者

• MUROTANI Toshio

  LSI R&D Laboratory, Mitsubishi Electric Corp.

• Ito Kazuhiko

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Otsubo Mutsuyuki

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• YOSHIDA Masahiro

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• Yoshida Masahiro

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• OTSUBO Mutsuyuki

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

関連論文

• Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In_xGa_As-GaAs_yP_
• Radiation Annealing of Si- and S-Implanted GaAs
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