Zinc Diffusion into InSb
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概要
- 論文の詳細を見る
A systematic study has been performed on diffusion of Zn in InSb using elemental Zn and Sb as the source in closed ampoules at 355-455°. The diffusion behavior could be well understood by arranging the data as a function of the mole ratio of Sb to Zn in the source, N_<sb>/N_<zn>. The diffusion depth was constant and independent of the total amount of Zn and/or Sb when N_<sb>/N_<zn> ≤0.5 or when N_<sb>/N_<zn>≥5, if the Zn source was enough. When N_<sb>/N_<zn>≥5, a highly planar, reproducible diffusion front was obtained. However, when N_<sb>/N_<zn>&5, a very ragged diffusion front and much damage were observed. These findings are understood using the In-Sb-Zn ternary phase diagram. Activation energies of 2.8 and 1.5 eV were obtained for N_<sb>/N_<zn>≤0.5 and N_<sb>/N_<zn>≥5, respectively, which suggests that there are two different diffusion mechanisms depending on N_<sb>/N_<zn>.
- 社団法人応用物理学会の論文
- 1983-05-20
著者
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MUROTANI Toshio
LSI R&D Laboratory, Mitsubishi Electric Corp.
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Murotani Toshio
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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NISHITANI Kazuo
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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NAGAHAMA Kouki
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Nagahama Kouki
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Nishitani Kazuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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