Preparation of High Quality n-Hg_<0.8>Cd_<0.2>Te Epitaxial Layer and Its Application to Infrared Detector (λ=8-14 μm)

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概要

• 論文の詳細を見る

• High mobility n-type Hg_<0.8>Cd_<0.2>Te liquid phase epitaxial layers on CdTe substrates are reproducibly obtained by annealing the layers under Hg overpressure and then by diffusing indium into the annealed layers. Their carrier concentrations and Hall mobilities are in the range of (1.5-2.0)×10^<15> cm^<-3> and (1.0-1.5)×10^5 cm^2/V・s, respectively at 77 K. A photoconductivity-type IR detector using one of these layers has detectivity D^*_λ higher than 2×10^<10> cm・Hz^<1/2>/W in the wavelength region of 8-14 μm with a peak detectivity D^*_<λp> of 3×10^<10> cm・Hz^<1/2>/W at 13 μm.

• 社団法人応用物理学会の論文
• 1982-12-20

著者

• MUROTANI Toshio

  LSI R&D Laboratory, Mitsubishi Electric Corp.

• NAGAHAMA Kouki

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• OHKATA Ryouji

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• Ohkata Ryouji

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Nagahama Kouki

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

関連論文

• Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In_xGa_As-GaAs_yP_
• Radiation Annealing of Si- and S-Implanted GaAs
• Characterization of Deep Levels in Semi-Insulating GaAs Crystals by a Spectroscopic Photoelectrochemical Current
• Zinc Diffusion into InSb
• Preparation of High Quality n-Hg_Cd_Te Epitaxial Layer and Its Application to Infrared Detector (λ=8-14 μm)
• Thermally Stable Metallization to InSb

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