New Dynamic RAM Cell Combined with Hi-C Structure : A-2: LSI-1
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Ozaki Hideyuki
Lsi Research & Development Lab.
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SATOH Shinichi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Nakano Takao
Lsi Research And Development Laboratory
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Nakano Takao
Lsi Research & Development Lab.
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Fujishima Kazuyasu
Lsi Research & Development Lab.
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Fujishima Kazuyasu
Lsi R&d Laboratory Mitsubishi Electric Corporation
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SHIMOTORI Kazuhiro
LSI Research & Development Lab.
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Shimotori Kazuhiro
Lsi Research & Development Lab.
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Satoh Shinichi
Lsi Research & Development Lab.
関連論文
- New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
- New Dynamic RAM Cell Combined with Hi-C Structure : A-2: LSI-1
- A High-Capacitance Trench Structure (Hi-CAT) for Megabit LSI Memories
- Soft Error Analysis of Fully Static MOS RAM : A-2: LSI-1
- Diffusion Length Measurement Using Dynamic MOS RAM : A-3: LSI-2
- Hot-Electron Trapping Effects of Short Channel 64 K Dynamic MOS RAM : A-2: LSI-1