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Fundamental Research Laboratories | 論文
- Growth of InN by Chloride-Transport Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- FIB Exposure Characteristics of LB Film
- MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC
- Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
- Selective Silicon Epitaxy Using Reduced Pressure Technique
- Superconducting Properties of Fe-Sn Superimposed Films
- Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers
- Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
- Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment
- Local Loading Effect in Selective Silicon Epitaxy
- GaAs Atomic Layer Epitaxy by Hydride VPE
- Sub-Micron Pattern Control Technology for Variable-Shaped EB Lithography : A-5: PROCESS TECHNOLOGY
- Silicon Selective Epitaxial Growth over Thick SiO_2 Islands
- Facet Formation in Selective Silicon Epitaxial Growth
- Crystalline Defects in Selectively Epitaxial Silicon Layers
- Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
- InGaAsP Visible Laser Crystal : B-4: LD AND LED-2
- Thermodynamics of GaAs Growth by MOC-VPE
- New Selective Deposition Technology by Electron Beam Induced Surface Reaction