スポンサーリンク
Department Of Electronic Engineering Cheng Shiu University | 論文
- AlInGaN 310nm Ultraviolet Metal-Insulator-Semiconductor Sensors with Photo-Chemical-Vapor-Deposition SiO_2 Cap Layers
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
- GaN Ultraviolet Schottky Barrier Photodetectors with ZrO_2 or SiO_2 Insulators
- Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers
- GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer
- Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
- Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
- Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
- Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
- Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Sensors with CsF Insulating Layer
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- Self-Heating p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Reliability Monitoring of Negative-Bias Temperature Instability
- Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors