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Department Of Electronic Engineering Cheng Shiu University | 論文
- GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- GaN-Based Metal-Insulator-Semiconductor Ultraviolet Sensors with CsF Insulating Layer (Special Issue : Recent Advances in Nitride Semiconductors)
- GaN-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors with HfO₂ Insulators (Special Issue : Recent Advances in Nitride Semiconductors)
- Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 μm Complementary Metal Oxide Semiconductor Technology
- Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
- Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise