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Department Of Electrical Engineering National Tsing-hua University | 論文
- Very Low Temperature Deposition of Polycrystalline Si Films Fabricated by Hydrogen Dilution with Electron Cyclotron Resonance Chemical Vapor Deposition
- Thin Film Transistors Made from Hydrogenated Microcrystalline Silicon
- Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor
- A Unified 3-D Mobility Model for the Simulation of Submicron MOS Devices
- New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDDn-MOSFET's
- New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's
- Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technuque
- A New Observation of the Width Dependent Hot Carrier Effect in Shallow-Trench-Isolated P-MOSFET's
- New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors
- Quantitative Investigation of Hot Carrier Induced Drain Current Degradation in Submicron Drain-Engineered Metal-Oxide-Semiconductor Field-Effect-Transistors : Semiconductors
- A Low-Power Architecture for Extended Finite State Machines Using Input Gating(Logic Synthesis)(VLSI Design and CAD Algorithms)
- An Improved Low Voltage Programming Scheme Using Forward Bias Assisted Drain Avalanche Induced Hot Electron Injection on P-Channel EEPROMs
- New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's
- Performance and Reliability Improvement of Polycrystalline Silicon Thin Film Transistors by Deuterium Plasma Passivation
- Reliability Test Guideline for a 0.18μm Generation multi-Oxide CMOS Technology for System-on-Chip Applications
- Analysis of Structure-Dependent Hot Carrier Effect in Various LDD MOSFET's Using an Efficient Interface State Profiling Method
- A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique
- Factitious Stroke Presenting for Acute Treatment
- Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials : TFT TECHNOLOGIES