A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique

スポンサーリンク

概要

• 論文の詳細を見る

• The tantalum silicide (TaSi_x) was investigated for the application of self-aligned gate (SAG) GaAs metal-semiconductor field-effect transistors (MESFET). TaSi_x film was deposited by sputtering with substrate bias from -100V to +75V. The optimal condition of substrate bias voltage is +50V for MESFET process according to ADS, XRD, and resistivity analysis. The Si^+ implantation at 80keV with dose 4 × 10^<13>cm^<-2> through thin TaSi_x film was adopted for the channel doping, For the gate patterning, reactive ion etching (RIE) of TaSi_x was performed in CF4 + O_2 (15%O_2) mixture at total pressure 40 mTorr with RF power 60 W. A 2μm × 50 μm TaSi_x SAG GaAs MESFET was then successfully fabricated. In this process, the TaSi_x film was used for the gate material, encapsulating layer, and film for through implantation. This new method simplifies the fabrication process of self-aligned GaAs MESFET.

• 社団法人応用物理学会の論文
• 1996-05-15

著者

• Huang F‐s

  Department Of Electrical Engineering National Tsing-hua University

• Huang Fon-shan

  Department Of Electrical Engineering National Tsing Hua University

• Chen Wei-su

  Department Of Electrical Engineering National Tsing-hua University

• HSU Wan-Thai

  Department of Electrical Engineering, National Tsing-Hua University

• TU Chuan-Cheng

  Department of Electrical Engineering, National Tsing-Hua University

• Hsu Wan-thai

  Department Of Electrical Engineering National Tsing-hua University

• Tu Chuan-cheng

  Department Of Electrical Engineering National Tsing-hua University:(present Address) Microwave Divis

関連論文

• Investigations of Localized States in Hydrogenated Amorphous Silicon
• A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique

スポンサーリンク