Investigations of Localized States in Hydrogenated Amorphous Silicon

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概要

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• A novel method is developed to investigate the localized states in the band gap of a-Si:H films by analyzing the photoluminescence spectra. A model of phonon emission process among localized states in long band tail is proposed to interpret the periodic oscillations in the sideband of photoluminescence spectra. For pure film samples of short band tail, thermalization of excited carriers in extended states gives a Gaussian-like photoluminescence spectrum. Rutherford backscattering spectrometry and d.c. conductivity measurement are also performed and analysis on these data conforms the above proposed model.

• 社団法人応用物理学会の論文
• 1984-01-20

著者

• Liu Yuen-chung

  Department Of Physics National Tsing Hua University

• Liu Yuen-chung

  Department Of Physics

• Huang Fon-shan

  Department Of Electrical Engineering National Tsing Hua University

• Chang Hua

  Department of Chemistry, National Tsing Hua University

• Chen Jiann-Reuy

  Department of Materials Science and Engineering, National Tsing Hua University

• Chang Hua

  Department Of Chemistry National Tsing Hua University

• Chen Jiann-reuy

  Department Of Materials Science And Engineering National Tsing Hua University

関連論文

• Backscattering Analysis of the Layer Structure of Titanium Silicides
• Investigations of Localized States in Hydrogenated Amorphous Silicon
• A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique

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