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Department Of Electrical Engineering National Tsing-hua University | 論文
- A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
- A Novel Technique for Investigating Hot-Electron-Induced Oxide Damages and Device Degradations in Submicron LDD n-MOSFET's
- A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement
- Reliability Test Guidelines for a 0.18 μm Generation Multi-Oxide CMOS Technology for System-on-Chip Applications